Semiconductor manufacturing equipment and semiconductor manufacturing method
AssigneeMitsubishi Electric Corporation
InventorHiroshi Tanaka
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AssigneeMitsubishi Electric Corporation
InventorHiroshi Tanaka
Estimating the term…
A rotation mechanism is configured to rotate a wafer including an etched region which is to be etched at least partially. An etching mechanism etches the etched region. A thickness measurement function is configured to generate time-dependent thickness data by measuring a thickness of the etched region. An etching control function is configured to stop the etching mechanism when a representative value of thickness of the etched region reaches a target thickness value. A thickness calculation function is configured to calculate the representative value of thickness for each unit period in which the wafer is rotated N times, where N is a natural number, based on measurement values of the time-dependent thickness data in a measurement section being a range measured during the unit period.
Semiconductor manufacturing equipment, comprising:
A semiconductor manufacturing method, comprising the steps of:
Dependencies are inferred from the claim text.