Heat treatment method for semiconductor wafer

A heat treatment method for a semiconductor wafer, comprising:

• heat treatment in a heat treatment furnace with lamp heating method of single wafer processing type having a susceptor capable of mounting the semiconductor wafer, the heat treatment being performed with lamp heating on a semiconductor wafer mounted on the susceptor disposed in the heat treatment furnace;
• and
• pre-heating with lamp heating to hold the temperature in the heat treatment furnace at a prescribed temperature lower than the temperature of the heat treatment for a prescribed holding period before the heat treatment, holding the semiconductor wafer separated from the susceptor during the pre-heating,
• wherein
• the semiconductor wafer is an SOI wafer,
• the heat treatment furnace has a lift pin configured to move the semiconductor wafer upwardly and downwardly with respect to the susceptor, and the semiconductor wafer is separated from the susceptor by being supported by the lift pin,
• the temperature of the heat treatment is 1100° C. or more, and the temperature of the pre-heating is 700° C. or more and less than 1100° C.