Method for processing workpiece
AssigneeTokyo Electron Limited
InventorsYoshihide Kihara, Toru Hisamatsu
Life of this patent
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Abstract
In an embodiment, a wafer W includes a layer EL to be etched and a mask MK4 provided on the layer EL to be etched, and a method MT of an embodiment, the layer EL to be etched is etched by removing the layer EL to be etched for each atomic layer, by repeating sequence SQ3 including step ST9a of irradiating the mask MK4 with secondary electrons by generating plasma and applying a DC voltage to an upper electrode 30 of a parallel plate electrode, and covering the mask MK4 with silicon oxide compound, step ST9b of generating plasma of fluorocarbon-based gas and forming a mixed layer MX2 including radicals on an atomic layer of the layer EL to be etched, and ST9d of generating plasma of Ar gas and applying a bias voltage to remove the mixed layer MX2.
Claims20
A method for processing a workpiece, the method comprising:
- providing a workpiece including a layer to be etched and a first mask on the layer to be etched;
- etching the layer to be etched by repeating a first sequence in a processing container without transferring the workpiece out of the processing container, the first sequence including
- irradiating the first mask with secondary electrons, and covering the first mask with silicon oxide compound containing silicon released from an electrode plate provided in an upper electrode, wherein irradiating and covering the first mask are carried out by generating plasma in a processing container of a plasma processing apparatus in which the workpiece is accommodated and applying a negative DC voltage to the upper electrode of a parallel plate electrode provided in the processing container;
- generating plasma of a first gas in the processing container and forming a mixed layer including radicals contained in the plasma on an atomic layer of a surface of the layer to be etched;
- purging a space inside the processing container;
- generating plasma of a second gas in the processing container and applying a bias voltage to the plasma to remove the mixed layer;
- and
- purging a space inside the processing container.
A method for processing a workpiece in a parallel plate type process chamber including an upper electrode that faces the workpiece, the method comprising:
- providing a workpiece including a layer to be etched and a first mask located on the layer to be etched;
- and
- performing an atomic layer etching to the layer to be etched by repeating a sequence in a processing container without transferring the workpiece out of the processing container, wherein the sequence includes:
- generating plasma from an inert gas and applying a negative DC voltage to the upper electrode to irradiate the first mask with secondary electrons and to cover the first mask with silicon oxide compound;
- generating a plasma from a first gas to form a mixed layer including radicals contained in the plasma on a surface of the layer;
- and
- generating a plasma from a second gas and applying a bias voltage to the workpiece to remove the mixed layer.
A method for processing a workpiece the method comprising:
- providing a workpiece including a layer to be etched and a first mask on the layer in a parallel plate type process chamber including an upper electrode that faces the workpiece;
- and
- performing an atomic layer etching to the layer by repeating a sequence, wherein
- the sequence includes:
- (a) generating plasma from an inert gas and applying a negative DC voltage to the upper electrode to irradiate the first mask with secondary electrons and to cover the first mask with silicon oxide compound;
- (b) generating a plasma from a first gas to form a mixed layer including radicals contained in the plasma on a surface of the layer;
- and
- (c) generating a plasma from a second gas and applying a bias voltage to the workpiece to remove the mixed layer.
Dependencies are inferred from the claim text.