Method of manufacturing semiconductor device and etching mask
AssigneeToshiba Memory Corporation
InventorsSoichi Yamazaki, Kazuhito Furumoto, Kosuke Horibe, Keisuke Kikutani, Atsuko Sakata, Junichi Wada, Toshiyuki Sasaki
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Abstract
A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.
Claims16
A method of manufacturing a semiconductor device, the method comprising:
- forming a first patterned mask layer comprising aluminum or an aluminum compound on a second mask layer to be etched, the second mask layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium, wherein the second mask layer further comprises (i) tungsten and (ii) at least one of boron or carbon, and wherein the second mask layer is disposed on a stacked body;
- patterning the second mask layer by etching using the first patterned mask layer;
- and
- etching the stacked body by using the patterned second mask layer to form a hole or a groove in the stacked body.
A method of manufacturing a semiconductor device, the method comprising:
- forming a mask layer comprising aluminum or an aluminum compound on a layer to be etched, the layer to be etched comprising at least one first metal selected from tungsten, hafnium, molybdenum, ruthenium, osmium, and rhenium, wherein the layer to be etched further comprises (i) tungsten and (ii) at least one of boron or carbon;
- patterning the mask layer;
- and
- etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.
A method of manufacturing a semiconductor device, the method comprising:
- forming a mask layer comprising aluminum or an aluminum compound on a layer to be etched, the layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium;
- patterning the mask layer;
- etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched;
- and
- disposing a charge storage film, an insulating film and a semiconductor film within the hole or the groove.
Dependencies are inferred from the claim text.