Cyclic selective deposition for tight pitch patterning
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Zhenxing Bi, Juntao Li, Dexin Kong
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Abstract
Techniques for tight pitch patterning of fins using a cyclic selective deposition process are provided. In one aspect, a method of patterning fins in a wafer includes: forming at least one mandrel on the wafer; forming alternating layers of a first dielectric and a second dielectric alongside the at least one mandrel; removing the at least one mandrel; removing either the first dielectric or the second dielectric; and patterning the fins in the wafer using whichever of the first dielectric or the second dielectric that remains as fin hardmasks. A finFET device and method for forming a finFET device are also provided.
Claims17
A method of patterning fins in a wafer, the method comprising the steps of:
- forming at least one mandrel on the wafer;
- forming alternating layers of a first dielectric and a second dielectric alongside the at least one mandrel;
- removing the at least one mandrel;
- removing either the first dielectric or the second dielectric;
- and
- patterning the fins in the wafer using whichever of the first dielectric or the second dielectric that remains as fin hardmasks.
A method of forming a fin field-effect transistor (finFET) device, the method comprising the steps of:
- forming at least one mandrel on a wafer;
- forming alternating layers of a first dielectric and a second dielectric alongside the at least one mandrel;
- removing the at least one mandrel;
- removing either the first dielectric or the second dielectric;
- patterning fins in the wafer using whichever of the first dielectric or the second dielectric that remains as fin hardmasks;
- forming gates over the fins;
- and
- forming source and drains on opposite sides of the gates, offset from the gates by gate spacers.
Dependencies are inferred from the claim text.