Semiconductor manufacturing apparatus and method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsNai-Han Cheng, Chi-Ming Yang
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Abstract
In some embodiments of the present disclosure, a method of treating an atom on a substrate includes an operation of ionizing an etchant and the ionized etchant is a positively charged. The method includes an operation of attaching the ionized etchant on the atom. The method also includes an operation of bonding the atom with the etchant to from a compound. The method further includes sputtering the substrate with a charged particle and an operation of applying a bias on the water.
Claims20
A method of treating an atom on a substrate, comprising:
- ionizing an etchant;
- attaching the ionized etchant on the atom;
- bonding the atom with the etchant to form a compound;
- and
- sputtering the substrate to remove the compound with a charged particle having an energy smaller than the bonding energy between the substrate and the atom, wherein the charged particle and the ionized etchant comprise different ions.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a plurality of first atoms in a top layer and a plurality of second atoms in a second layer, wherein the second layer is disposed under the top layer, and the plurality of first atoms and the plurality of second atoms are the same;
- forming a plurality of compounds over the substrate by bonding the plurality of first atoms with a plurality of ionized atoms, wherein the plurality of ionized atoms comprises halogen atoms;
- and
- removing the plurality of compounds from the substrate by bombarding the compounds with a plurality of charged particles having a bombarding energy smaller than a bonding energy between each of the plurality of second atoms, and greater than a bonding energy between each of the plurality of compounds and each of the plurality of second atoms.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a plurality of first atoms in a top layer and a plurality of second atoms in a second layer, wherein the second layer is disposed under the top layer, and the plurality of first atoms and the plurality of second atoms comprise silicon atoms;
- disposing a patterned photo resist layer over the substrate;
- attaching an ionized etchant on the substrate exposed through the patterned photo resist layer, wherein the ionized etchant comprises ionized Cl2 gas;
- bonding the plurality of first atoms with the ionized etchant to form a plurality of compounds SixCly over the second layer of the substrate;
- and
- removing the compounds from the second layer of the substrate to form a plurality of trenches by bombarding the plurality of compounds with a plurality of charged particles having a bombarding energy smaller than a bonding energy between the second atoms of the substrate, and greater than a bonding energy between each of the plurality of compounds and each of the plurality of second atoms.
Dependencies are inferred from the claim text.