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US 10,763,115 B2Granted
Substrate treatment method for semiconductor device fabrication
AssigneeNXP USA, Inc.
InventorRama I. Hegde
Life of this patent
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Abstract
A method of removing an oxide layer is provided. A metal layer is deposited over an oxide layer formed at a top surface of a germanium substrate. A metal oxide layer is deposited over the metal layer. The metal oxide layer includes a same metal material as the metal layer. The metal layer and the oxide layer are reacted and combined with the metal oxide layer to form a dielectric layer during an anneal process. During the anneal process, the oxide layer is reacted with the metal layer and removed.
Claims19
A method comprising:
- depositing a first metal layer directly on a native germanium oxide layer at a top surface of a germanium substrate;
- during a first anneal process, forming a metal oxide layer by way of combining the first metal layer with the native germanium oxide layer,
- depositing a second metal layer over the metal oxide layer;
- and
- during a second anneal process, forming a dielectric layer by way of combining the first metal layer with the second metal layer.
2 more elements
A method comprising:
- depositing a first metal layer directly on a native germanium oxide (GeOx) layer at a top surface of a germanium substrate;
- during a first anneal process, forming a metal oxide layer by way of combining the metal layer and the native germanium oxide layer;
- depositing a second metal layer over the metal oxide layer, the second metal oxide layer comprising a same metal material as the metal oxide layer;
- and
- during a second anneal process, forming a high-K dielectric layer from the metal oxide layer and the second metal layer.
2 more elements
Dependencies are inferred from the claim text.