Polyhedron of which upper width is narrower than lower width, manufacturing method therefor, and photoelectric conversion device comprising same
AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorsDong Rip Kim, Hanmin Jang, Min Soo Jeon
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Abstract
Provided are a polyhedron of which the upper width is narrower than the lower width, a manufacturing method therefor, and a photoelectric conversion device comprising the same. The photoelectric conversion device comprises: a substrate; a polyhedron disposed on the substrate and of which the upper width is narrower than the lower width; and a semiconductor layer disposed on the polyhedron. The photoelectric conversion device to which the polyhedron, of which the upper width is narrower than the lower width, is applied can have improved photoelectric conversion efficiency due to structural characteristics of the polyhedron.
Claims17
A photoelectric conversion device comprising:
- a silicon substrate;
- a crystalline silicon polyhedron grown from the substrate, wherein the polyhedron has a bottom in contact with the substrate and a tapered top;
- and
- a semiconductor layer disposed on the polyhedron,
- wherein the polyhedron consists of a plurality of planes,
- wherein an angle formed by each of the planes of the polyhedron and a surface of the substrate is reduced toward the tapered top,
- wherein the polyhedron has a sharp vertex, an edge, or a plane at the tapered top thereof,
- wherein each of the plurality of planes is a crystal facet having single miller index, and
- wherein the vertex, the edge, or the plane at the tapered top of the polyhedron exists where a plurality of crystal facets each having single miller index of {111} meets.
A solar cell comprising:
- a silicon substrate;
- a first conductive-type crystalline silicon polyhedron grown from the substrate, wherein the polyhedron has a bottom in contact with the substrate and a tapered top;
- a second conductive-type semiconductor layer disposed on the first conductive-type polyhedron;
- a first electrode electrically connected to the first conductive-type polyhedron;
- and
- a second electrode electrically connected to the second conductive-type semiconductor layer,
- wherein the polyhedron consists of a plurality of planes,
- wherein an angle formed by each of the planes of the polyhedron and a surface of the substrate is reduced toward the tapered top,
- wherein the polyhedron has a sharp vertex, an edge, or a plane at the tapered top thereof, and
- wherein each of the plurality of planes is a crystal facet having single miller index, and
- wherein the vertex, the edge, or the plane at the tapered top of the polyhedron exits where a plurality of crystal facets each having single miller index of {111} meets.
A light-emitting diode comprising:
- a silicon substrate;
- a crystalline silicon polyhedron grown from the substrate, wherein the polyhedron has a bottom in contact with the substrate and a tapered top;
- a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, which are sequentially disposed on the polyhedron;
- a first electrode electrically connected to the first conductive-type semiconductor layer;
- and
- a second electrode electrically connected to the second conductive-type semiconductor layer,
- wherein the polyhedron consists of a plurality of planes,
- wherein an angle formed by each of the planes of the polyhedron and a surface of the substrate is reduced toward the tapered top,
- wherein the polyhedron has a sharp vertex, an edge, or a plane at the tapered top thereof, and
- wherein each of the plurality of planes is a crystal facet having single miller index, and
- wherein the vertex, the edge, or the plane at the tapered top of the polyhedron is formed where a plurality of crystal facets each having single miller index of {111} meets.
Dependencies are inferred from the claim text.