Boron-containing compounds, compositions, and methods for the deposition of a boron containing films

A method to deposit a boron-containing film onto at least a surface of a substrate which comprises the steps of:

• providing the substrate in a reactor;
• and
• forming the boron-containing film on a surface of the substrate in a deposition process selected from a group consisting of a chemical vapor deposition, an atomic layer deposition-like deposition, and an atomic layer deposition process, wherein the deposition process is conducted at one or more temperatures from room temperature to about 400° C. and repeated until a desired thickness of the boron-containing film is obtained and includes a boron-containing precursor selected from at least one compound having the following formula I and II:
• wherein R1 is selected from a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C4 to C10 aryl group;
• R2 is selected from hydrogen, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 aryl group;
• and optionally wherein R1 and R2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring;
• wherein the amount of boron in the boron containing film is 8% or less.