Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus comprising:

• a process chamber in which a substrate is processed;
• a precursor supply system configured to supply a precursor including a ring-shaped structure composed of silicon and carbon and containing halogen to the substrate in the process chamber;
• a nitriding agent supply system configured to supply a nitriding agent to the substrate in the process chamber;
• an oxidizing agent supply system configured to supply an oxidizing agent to the substrate in the process chamber;
• a heater configured to heat the substrate in the process chamber;
• and
• a controller configured to control the precursor supply system, the nitriding agent supply system, the oxidizing agent supply system and the heater so as to perform a process in the process chamber, the process comprising:
• forming a first film including the ring-shaped structure and containing nitrogen so as to fill a recess formed in a surface of the substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying the precursor to the substrate with the recess formed in the surface;
• and
• supplying the nitriding agent to the substrate;
• wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved;
• and
• performing post-treatment by supplying the oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved,
• wherein the act of performing the post-treatment includes oxidizing the first film to be converted into a second film including the ring-shaped structure and containing oxygen,
• wherein the act of forming the first film includes forming the first film having seams or voids, and
• wherein in the act of performing the post-treatment, the seams or voids of the first film are removed by converting the first film into the second film.

A non-transitory computer-readable storage medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

• forming a first film including a ring-shaped structure composed of silicon and carbon and containing nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying a precursor including the ring-shaped structure and containing halogen to the substrate with the recess formed in the surface, and
• supplying a nitriding agent to the substrate;
• wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved;
• and
• performing post-treatment by supplying an oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved,
• wherein the act of performing the post-treatment includes oxidizing the first film to be converted into a second film including the ring-shaped structure and containing oxygen,
• wherein the act of forming the first film includes forming the first film having seams or voids, and
• wherein in the act of performing the post-treatment, the seams or voids of the first film are removed by converting the first film into the second film.