Method for manufacturing restored substrate and method for manufacturing light emitting element
AssigneeNichia Corporation
InventorTakayuki Mitsunaga
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Abstract
A method for manufacturing a restored substrate includes: removing a nitride semiconductor layer from a stacked-layer in which the nitride semiconductor layer has been laminated on a substrate; oxidizing material adhering to the substrate to produce an oxide deposit after the removing of the nitride semiconductor layer from the stacked-layer; and removing the oxide deposit from the substrate. A method for manufacturing a light emitting element includes stacking nitride semiconductor layers including an active layer on the restored substrate obtained by the above method.
Claims9
A method for manufacturing a restored substrate, comprising:
- providing a stacked-layer in which a nitride semiconductor layer containing silicon has been stacked on a surface of a sapphire substrate;
- removing the nitride semiconductor layer from the stacked-layer;
- after the removing of the nitride semiconductor layer from the stacked-layer, a surface of the substrate is exposed;
- forming an oxide deposit containing SiO2 by oxidizing a silicon containing-material adhering to the exposed surface of the substrate, the silicon containing-material being caused by the nitride semiconductor layer;
- and
- removing the oxide deposit from the substrate to expose the surface of the substrate.
Dependencies are inferred from the claim text.