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US 10,763,091 B2Granted
Physical vapor deposition chamber particle reduction apparatus and methods
AssigneeApplied Materials, Inc.
InventorsVibhu Jindal, Sanjay Bhat, Majeed A. Foad
Life of this patent
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Abstract
Physical vapor deposition processing chambers and methods of processing a substrate such as an EUV mask blank in a physical vapor deposition chamber are disclosed. An electric field and a magnetic field are utilized to deflect particles from a substrate being processed in the chamber.
Claims18
A physical vapor deposition chamber comprising:
- a chamber wall defining an inner volume within the physical vapor deposition chamber;
- a backing plate configured to support a sputtering target, the backing plate disposed in an upper section of the inner volume;
- a substrate support having a support surface to support a substrate below the backing plate;
- a central region between the backing plate and the substrate support;
- a process kit including a shield surrounding the central region, the shield comprising a cylindrical body having an inner surface, an upper portion and a lower portion;
- a first electrode assembly positioned on an inner surface of the shield and within the central region;
- and
- a magnet positioned on the inner surface of the shield and within the central region, the first electrode assembly positioned and configured to create an electromagnetic field that laterally displaces particles generated during a physical vapor deposition process that cause defects, and the first electrode assembly and the magnet cooperate to prevent the particles that cause defects from contacting a substrate on the substrate support during the physical vapor deposition process.
5 more elements
A method of processing a substrate in a physical vapor deposition chamber, the method comprising:
- placing a substrate on a substrate support within an inner volume of the physical vapor deposition chamber defined by a chamber wall, the inner volume including an upper section and a lower section, the substrate support in the lower section;
- sputtering material from a target of source material located above the substrate support in an upper section, there being a central region between the target of source material and the substrate support and process kit including a shield surrounding the central region, the shield comprising a cylindrical body having an inner surface, an upper portion and a lower portion, and a magnet positioned on an inner surface of the lower portion of the shield and within the central region;
- and
- applying a voltage to a first electrode assembly positioned on an inner surface of the upper portion of the shield to laterally displace particles generated during a physical vapor deposition process that cause defects, and the first electrode assembly and the magnet cooperate to prevent the particles that cause defects from contacting a substrate on the substrate support during the physical vapor deposition process.
1 more element
Dependencies are inferred from the claim text.