US 10,763,090 B2 · High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

Abstract

Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Claims19

Dependent claims

A plasma processing chamber, comprising:

a lid assembly, comprising:
a target having a first surface that is in contact with a processing region and a second surface that is opposite the first surface;
and
a lid enclosure, comprising:
a center feed that is electrically coupled to the target by a conductive wall;
the conductive wall directly coupled to the center feed at a first end of the center feed;
and
the center feed including a flange at a second end of the center feed, the first end and the second end being opposing ends of the center feed, wherein
the center feed is hollow throughout,
the center feed has a length (A),
the center feed has a thickness defined by a difference between an outer diameter (D1) and an inner diameter (D2),
a surface area aspect ratio of the center feed is between about 0.001/mm and about 0.025/mm, wherein the surface area aspect ratio is calculated by A/(πD1A+πD2A),
the flange is directly coupled to a radio frequency (RF) power supply, and
the flange is directly coupled to a direct current (DC) power supply.

11 more elements

Dependencies are inferred from the claim text.

High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

Life of this patent

High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

Life of this patent

Abstract

Claims19