Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
AssigneeApplied Materials, Inc.
InventorsLinying Cui, James Rogers
Life of this patent
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Abstract
The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.
Claims17
A substrate support, comprising:
- a vertical stack comprising:
- an electrostatic chuck having a substrate electrode embedded therein for chucking a substrate to an upper surface of the electrostatic chuck, wherein the electrostatic chuck includes one or more channels through which a fluid is provided to facilitate temperature control of the substrate support,
- a ground plate surrounding an insulating layer, wherein the insulating layer is below the electrostatic chuck,
- a baseplate underneath the electrostatic chuck to feed radio frequency (RF) power to the substrate, the baseplate positioned between a lower portion of the ground plate and the electrostatic chuck,
- a quartz pipe ring circumscribing the baseplate and the electrostatic chuck;
- an edge ring disposed over the electrostatic chuck and circumscribes the substrate;
- an edge ring electrode located underneath the edge ring;
- and
- a tuning circuit configured to couple a first RF power source at a first frequency and a second RF power source at a second frequency that provide power to the substrate electrode and to the edge ring electrode through three transmission lines spaced about the substrate support at even intervals, the tuning circuit comprising:
- a RF circuit including a LC resonant circuit coupled to the edge ring electrode through one of the transmission lines, the LC resonant circuit comprising:
- a first variable capacitor coupled to the edge ring electrode, and
- a first inductor coupled to the edge ring electrode.
A process chamber comprising:
- a chamber body;
- a lid disposed on the chamber body;
- an inductively coupled plasma apparatus positioned above the lid;
- and
- a substrate support positioned within the chamber body, the substrate support comprising:
- a vertical stack comprising:
- an electrostatic chuck having a substrate electrode embedded therein for chucking a substrate to an upper surface of the electrostatic chuck, wherein the electrostatic chuck includes one or more channels through which a fluid is provided to facilitate temperature control of the substrate support,
- a ground plate surrounding an insulating layer, wherein the insulating layer is below the electrostatic chuck,
- a baseplate underneath the electrostatic chuck to feed radio frequency (RF) power to the substrate, the baseplate positioned between a lower portion of the ground plate and the electrostatic chuck,
- a quartz pipe ring circumscribing the baseplate and the electrostatic chuck;
- an edge ring disposed over the electrostatic chuck and circumscribes the substrate
- an edge ring electrode located about a periphery of the baseplate, wherein the edge ring electrode is located underneath the edge ring:
- and
- a tuning circuit configured to couple a first RF power source at a first frequency and a second RF power source at a second frequency that provide power to the substrate electrode and to the edge ring electrode through three transmission lines spaced about the substrate support at even intevals, the tuning circuit comprising:
- a RF circuit including:
- a LC resonant circuit coupled to the edge ring electrode through one of the transmission lines, the LC resonant circuit comprising:
- a first variable capacitor, a first inductor, and a second inductor coupled to the edge ring electrode.
Dependencies are inferred from the claim text.