Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the composition
AssigneeUp Chemical Co., Ltd.
InventorsWon Seok Han, Wonyong Koh
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Abstract
Liquid precursor compositions are provided, along with methods of preparing the liquid precursor compositions, and methods for forming layers using the liquid precursor composition, for example in vapor deposition processes such as CVD and ALD. In some embodiments, the liquid precursor compositions comprise a metal compound of the formula M(DAD)2, where M is Co or Ni and DAD is a diazadiene ligand.
Claims10
A method for forming a layer by vapor deposition, comprising:
- depositing a layer containing a metal or metal compound using a liquid precursor composition comprising a metal compound of Chemical Formula 1:
- M(DAD)2;
- <Chemical Formula 1>
- wherein in the Chemical Formula 1,
- M denotes Co, and
- DAD denotes a diazadiene ligand represented by R1NC(R3)C(R4)NR2,
- wherein R1 and R2 are isopropyl groups and R3 and R4 are independently H or a linear or branched alkyl group of C1-5,
- wherein the metal compound is 90% or more of the liquid precursor composition, and
- wherein the liquid precursor composition is liquid at room temperature.
A vapor deposition process for forming a Co-containing film on a substrate comprising contacting a substrate with a vapor phase reactant, wherein the vapor phase reactant is formed from a liquid precursor composition that is at least about 90% X(iPrNCHCHNiPr)2, wherein X is Co, and wherein the liquid precursor composition is liquid at room temperature.
Dependencies are inferred from the claim text.