Semiconductor memory device

A semiconductor memory device, comprising:

• a substrate;
• a stacked body comprising a plurality of first conductors extending in a first direction away from a surface of the substrate, the first conductors spaced from one another in a second direction intersecting the first direction and a third direction intersecting the first and the second directions, the stacked body comprising a first region and a second region spaced from one another in the third direction;
• a plurality of second conductors extending in the second direction and spaced from one another in the first and third directions;
• a plurality of third conductors extending in the third direction and spaced from one another in the first direction, each third conductor connected to a first end, in the second direction, of the plurality of second conductors in the first region;
• a plurality of fourth conductors extending in the first direction and spaced from one another in the second direction, each fourth conductor connected to the plurality of second conductors in the second region;
• and
• memory cells located between adjacent surfaces of the first and second conductors in the first region.