Techniques to reduce read-modify-write overhead in hybrid DRAM/NAND memory
AssigneeSamsung Electronics Co., Ltd.
InventorsMu-Tien Chang, Heehyun Nam, Youngsik Kim, Youngjin Cho, Dimin Niu, Hongzhong Zheng
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsMu-Tien Chang, Heehyun Nam, Youngsik Kim, Youngjin Cho, Dimin Niu, Hongzhong Zheng
Estimating the term…
A method of choosing a cache line of a plurality of cache lines of data for eviction from a frontend memory, the method including assigning a baseline replacement score to each way of a plurality of ways of a cache, the ways respectively storing the cache lines, assigning a validity score to each way based on a degree of validity of the cache line stored in each way, assigning an eviction decision score to each way based on a function of the baseline replacement score for the way and the validity score for the way, and choosing a cache line of the way having a highest eviction decision score as the cache line for eviction.
A method of choosing a cache line of a plurality of cache lines of data for eviction from a frontend memory, the method comprising:
A memory cache controller for implementing a pre-read operation with a memory module, the memory cache controller being configured to:
A method of performing a read-modify-write operation with a memory module, the method comprising:
Dependencies are inferred from the claim text.