Adjustment of a pre-read operation associated with a write operation
AssigneeMicron Technology, Inc.
InventorsZhenlei E. Shen, Zhengang Chen, Tingjun Xie, Jiangli Zhu
Life of this patent
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Abstract
Data can be received at a memory sub-system. A characteristic of the memory sub-system can be identified. A read voltage level can be determined based on the characteristic of the memory sub-system. A read operation can be performed at the memory sub-system based on the read voltage level to retrieve stored data. The received data can be stored at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.
Claims19
A method comprising:
- receiving first data at a memory sub-system;
- identifying a characteristic of the memory sub-system, the characteristic comprising an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system;
- comparing the amount of time that has elapsed since the prior write operation to a threshold amount of time;
- adjusting, by a processing device, a prior read voltage level to determine an adjusted read voltage level based on the amount of time that has elapsed since the prior write operation exceeding the threshold amount of time;
- performing a read operation at the memory sub-system based on the adjusted read voltage level to retrieve second data;
- and
- storing the first data at the memory sub-system based on the second data retrieved by the read operation that was based on the adjusted read voltage level.
A system comprising:
- a memory component;
- and
- a processing device, operatively coupled with the memory component, to:
- receive data at a memory sub-system;
- identify a characteristic of the memory sub-system, the characteristic comprising an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system;
- compare the amount of time that has elapsed since the prior write operation to a threshold amount of time;
- adjust a prior read voltage level to determine an adjusted read voltage level based on the amount of time that has elapsed since the prior write operation exceeding the threshold amount of time;
- perform a read operation at the memory sub-system based on the adjusted read voltage level to retrieve stored data;
- and
- store the received data at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the adjusted read voltage level.
A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
- receiving data at a memory sub-system;
- identifying a condition of the memory sub-system, the condition comprising an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system exceeds a threshold amount of time;
- in response to identifying the condition of the memory sub-system, determining a new read voltage level for the memory sub-system, wherein the new read voltage level is changed from a prior read voltage level used by the memory sub-system;
- and
- applying the new read voltage level to one or more memory cells of the memory sub-system to store the received data.
Dependencies are inferred from the claim text.