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US 10,761,423 B2Granted
Chemical composition for tri-layer removal
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Min Chen, Kuo Bin Huang, Neng-Jye Yang, Chia-Wei Wu, Jian-Jou Lian
Life of this patent
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Abstract
A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.
Claims20
A method comprising:
- forming a tri-layer, the tri-layer comprising:
- a bottom layer, wherein the bottom layer is formed of a material that is cross-linked;
- a first middle layer over the bottom layer;
- and
- a first top layer over the first middle layer, wherein the first top layer comprises a photo resist;
- exposing the first top layer using a first photo lithography mask;
- after the exposing, removing the first top layer;
- removing the first middle layer using a chemical solution, wherein the chemical solution is free from potassium hydroxide (KOH), and comprises at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride;
- after the first top layer and the first middle layer are both removed, forming a second middle layer over and contacting the remaining bottom layer that is cross-linked;
- forming a second top layer over the second middle layer, wherein the second top layer comprises an additional photo resist;
- and
- performing a light-exposure process on the second top layer using a second photo lithography mask having a same pattern as the first photo lithography mask.
9 more elements
A method comprising:
- forming a first middle layer over a bottom layer, wherein the first middle layer comprises siloxane, and the bottom layer comprises a homogenous material comprising carbon, hydrogen, oxygen, and the homogenous material is cross-linked;
- forming a first top layer over the first middle layer, wherein the first top layer comprises a first photo resist;
- performing a first light-exposure process and a first development process on the first top layer, wherein the first light-exposure process is performed using a first photo lithography mask;
- after the first light-exposure process and the first development process, removing entireties of the first top layer and the first middle layer, wherein the bottom layer remains as a blanket layer after the first middle layer is removed;
- forming a second middle layer comprising siloxane over the bottom layer;
- forming a second top layer over the second middle layer;
- and
- performing a second light-exposure process and a second development process on the second top layer using a second photo lithography mask having an identical pattern as the first photo lithography mask.
5 more elements
A method comprising:
- forming a bottom layer, wherein the bottom layer is formed of a cross-linked organic material;
- forming a first middle layer over and contacting the cross-linked organic material of the bottom layer;
- forming a first top layer over the first middle layer;
- performing a light exposure and a development on the first top layer;
- removing the first top layer;
- removing an entirety of the first middle layer in a chemical solution, wherein the bottom layer remains after the first middle layer is removed;
- forming a second middle layer over and contacting the cross-linked organic material of the bottom layer;
- forming a second top layer;
- performing an additional light exposure and an additional development on the second top layer;
- etching the second middle layer and the bottom layer using the second top layer as an etching mask;
- and
- removing an entirety of the bottom layer.
9 more elements
Dependencies are inferred from the claim text.