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US 10,761,146 B2Granted
Wafer probe card for evaluating micro light emitting diodes, analysis apparatus including the same, and method of fabricating the wafer probe card
AssigneeSamsung Electronics Co., Ltd.
InventorsJong Hoon Jung, Dae Sik Kim, Sung Yeol Kim, Seung Yong Shin
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Abstract
Provided are a wafer probe card that matches in one-to-one correspondence with an LED wafer by implementing a probe system having the same size as the LED wafer, and inspects brightness and wavelength of light emitted from a plurality of LEDs provided on the LED wafer at once by controlling the plurality of LEDs to emit light, an analysis apparatus including the same, and a method of fabricating the wafer probe card.
Claims13
A wafer probe card comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a plurality of first pads and a plurality of second pads formed on the insulating layer;
- and
- a plurality of rear pads connected to the plurality of first pads and the plurality of second pads, respectively, via through silicon vias (TSVs),
- wherein the plurality of first pads and the plurality of second pads are configured to transfer electrical signals to electrode pads of a light emitting diode (LED) wafer,
- wherein the plurality of first pads are connected to each other by an electric wiring in a first direction through the TSVs, and
- wherein the plurality of second pads are connected to each other by an electric wiring in a second direction through the TSVs.
5 more elements
An analysis apparatus comprising:
- an optical source application unit configured to transmit power to a wafer probe card;
- an optical measurement unit configured to collect light emitted from a plurality of light emitting diodes (LEDs) and transmit measurement results of the light collected;
- and
- a processor configured to execute instructions to control the optical source application unit and analyze the plurality of LEDs based on the measurement results received from the optical measurement unit,
- wherein the wafer probe card comprises:
- a substrate;
- an insulating layer formed on the substrate;
- a plurality of first pads and a plurality of second pads formed on the insulating layer;
- and
- a plurality of rear pads connected to each of the plurality of first pads and the plurality of second pads, respectively, using through silicon vias (TSVs),
- wherein the plurality of first pads and the plurality of second pads are configured to transfer power from the optical source application unit to the plurality of LEDs.
8 more elements
Dependencies are inferred from the claim text.