IGBT temperature sensor correction apparatus and temperature sensing correction method using the same
AssigneesHyundai Motor Company, Kia Motors Corporation
InventorsJi Woong Jang, Kang Ho Jeong, Ki Jong Lee, Sang Cheol Shin
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Abstract
An Insulated Gate Bipolar Transistor (IGBT) temperature sensor correction apparatus includes an Insulated Gate Bipolar Transistor (IGBT); a temperature sensor having a sensing diode; and a process variation sensor having an internal resistor.
Claims14
An Insulated Gate Bipolar Transistor temperature sensor correction apparatus comprising:
- a driver Integrated Circuit (IC) comprising a first output terminal outputting a gate signal and a second output terminal outputting a constant voltage source;
- an Insulated Gate Bipolar Transistor (IGBT) comprising an IGBT receiving the gate signal, an internal resistor, and a sensing diode connecting a first end of the internal resistor;
- and
- an external resistor connecting the second output terminal and a second end of the internal resistor,
- wherein the driver IC is configured to sense a sensing voltage between a first end of the sensing diode and a second end of the sensing diode and obtain a temperature information based on the sensing voltage,
- wherein the driver IC is configured to obtain a current applied to the sensing diode based on a resistance of the external resistor, a resistance of the internal resistor and the temperature information,
- wherein the driver IC is configured to obtain an offset voltage value based on the sensing voltage and a predetermined voltage, and
- wherein the resistance of the external resistor is controlled based on the offset voltage value.
A temperature sensing correction method using an Insulated Gate Bipolar Transistor (IGBT) temperature sensor, the method comprising:
- outputting, by a driver integrated circuit, a gate signal and a constant voltage source;
- sensing a sensing voltage between a first end of the sensing diode and a second end sensing diode and obtain a temperature information based on the sensing voltage;
- obtaining a current applied to the sensing diode based on a resistance of an external resistor, a resistance of the internal resistor and the temperature information;
- obtaining an offset voltage value based on the sensing voltage and a predetermined voltage;
- and
- controlling a resistance of the external resistor based on the offset voltage value.
A non-transitory computer readable medium containing program instructions for performing a temperature sensing correction method using an Insulated Gate Bipolar Transistor (IGBT) temperature sensor, the program instructions when executed by a processor causing the processor to:
- output a gate signal and a constant voltage source;
- sense a sensing voltage between one end of the sensing diode and the other end sensing diode and obtain a temperature information based on the sensing voltage,
- obtain a current applied to the sensing diode based on a resistance of an external resistor, a resistance of the internal resistor and the temperature information,
- obtain an offset voltage value based on the sensing voltage and a predetermined voltage;
- and
- control a resistance of the external resistor based on the offset voltage value.
Dependencies are inferred from the claim text.