Solid-state image pickup device and electronic apparatus

An electronic apparatus, comprising:

• a solid-state image pickup device including:
• a plurality of unit pixels in a two-dimensional arrangement, wherein each unit pixel of the plurality of unit pixels includes:
• a photodiode including a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type, wherein
• the second semiconductor region has a majority carrier concentration higher than a majority carrier concentration of the first semiconductor region, and
• the second conductivity type is opposite to the first conductivity type;
• a reset transistor configured to reset the photodiode;
• an amplifier transistor configured to electrically connect to the second semiconductor region;
• and
• a signal line connected with the amplifier transistor one of directly or through an active terminal;
• and
• a driving circuit configured to:
• drive each unit pixel of the plurality of unit pixels;
• and
• acquire a reset level that corresponds to a signal level output to the signal line, wherein
• the reset level is acquired in one of a conducted state of the reset transistor or a non-conducted state of the reset transistor,
• the reset level is acquired in the conducted state based on illuminance of incident light that is incident on the solid-state image pickup device, and
• the illuminance is above a threshold;
• a signal processing circuit configured to process an output signal output from the solid-state image pickup device;
• and
• an optical system configured to cause the incident light to be incident on the solid-state image pickup device.

A solid-state image pickup device, comprising:

• a plurality of unit pixels in a two-dimensional arrangement, wherein each unit pixel of the plurality of unit pixels includes:
• a photodiode including a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type, wherein
• the second semiconductor region has a majority carrier concentration higher than a majority carrier concentration of the first semiconductor region, and
• the second conductivity type is opposite to the first conductivity type;
• a reset transistor configured to reset the photodiode;
• two staged amplifier transistors comprising a first amplifier transistor and a second amplifier transistor, wherein
• the first amplifier transistor is configured to electrically connect to the second semiconductor region, and
• the second amplifier transistor is proximal to a signal line than the first amplifier transistor;
• a first memory between the first amplifier transistor and the second amplifier transistor;
• a selecting transistor connected with the second amplifier transistor and the signal line, wherein the selecting transistor is configured to output data to the signal line in conduction;
• and
• a switching transistor corresponding to the first memory, wherein
• the switching transistor is in conduction based on a conducted state of the reset transistor and a non-conducted state of the reset transistor,
• the conduction of the switching transistor is in an exposure time in which exposure is executed,
• the conduction of the switching transistor in a signal reading period is based on the conducted state of the reset transistor and a conducted state of the selecting transistor, and
• the signal reading period is a time in which a signal retained in the first memory is read;
• and
• a driving circuit configured to drive each unit pixel of the plurality of unit pixels.

An electronic apparatus, comprising:

• a solid-state image pickup device including:
• a plurality of unit pixels in a two-dimensional arrangement, wherein each unit pixel of the plurality of unit pixels includes:
• a photodiode including a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type, wherein
• the second semiconductor region has a majority carrier concentration higher than a majority carrier concentration of the first semiconductor region, and
• the second conductivity type is opposite to the first conductivity type;
• a reset transistor configured to reset the photodiode;
• two staged amplifier transistors comprising a first amplifier transistor and a second amplifier transistor, wherein
• the first amplifier transistor is configured to electrically connect to the second semiconductor region, and
• the second amplifier transistor is proximal to a signal line than the first amplifier transistor;
• a memory between the first amplifier transistor and the second amplifier transistor;
• a selecting transistor connected with the second amplifier transistor and the signal line, wherein the selecting transistor is configured to output data to the signal line in conduction;
• and
• a switching transistor corresponding to the memory, wherein
• the switching transistor is in conduction based on a conducted state of the reset transistor and a non-conducted state of the reset transistor,
• the conduction of the switching transistor is in an exposure time in which exposure is executed,
• the conduction of the switching transistor in a signal reading period is based on the conducted state of the reset transistor and a conducted state of the selecting transistor, and
• the signal reading period is a time in which a signal retained in the memory is read;
• a driving circuit configured to drive each unit pixel of the plurality of unit pixels;
• a signal processing circuit configured to process an output signal output from the solid-state image pickup device;
• and
• an optical system configured to cause incident light to be incident on the solid-state image pickup device.