Crossbar reinforced semiconductor fins having reduced wiggling

A method for forming a semiconductor structure, the method comprising:

• forming at least two semiconductor fins on a substrate;
• forming a monolayer of polymer brush material over the fins and the substrate;
• applying a block copolymer comprising a first polymer and a second polymer in between the fins, such that the first polymer and second polymer self-assemble into a plurality of interleaved first microdomains and second microdomains perpendicular to and within a trench between the fins, the first microdomains comprising the first polymer and the second microdomains comprising the second polymer;
• and
• removing the second microdomains, wherein the polymer brush is greater than about 47% and less than about 78% of styrene content and the block copolymer is lamella-forming with about 50% of polystyrene.