Dispersion solution of semiconductor single-layer carbon nanotube
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsYoko Iizumi, Toshiya Okazaki, Hajime Sakakita, Jaeho Kim
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Abstract
Exemplary Embodiments of the invention address the problem of providing semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV, and a method for manufacturing the same. In one embodiment of the invention, by applying a method for directly irradiating semiconductor single-layer carbon nanotubes with ultraviolet light in atmospheric air, ozone is generated in the atmosphere, a gram amount of oxygen atoms is introduced to the semiconductor single-layer carbon nanotubes, and semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV.
Claims4
A dispersion solution, comprising:
- a semiconductor single-walled carbon nanotube having a chiral index of (6, 5) wherein an oxygen atom is introduced into the semiconductor single-walled carbon nanotube as epoxide,
- wherein the semiconductor single-walled carbon nanotube with the oxygen atom is dispersed in a solvent, and
- the semiconductor single-walled carbon nanotube with the oxygen atom further comprises an emission wavelength from 1200 nm to 1400 nm by irradiation of an excitation light having a wavelength from 450 nm to 1000 nm.
Dependencies are inferred from the claim text.