High power silicon on insulator switch
AssigneeIntegrated Device Technology, Inc.
InventorsHojung Ju, Roberto Aparicio Joo
Life of this patent
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Abstract
An apparatus comprises a first RF port, a second RF port, a first resonator circuit and at least one second resonator circuit. The first resonator circuit and the second resonator circuit may be connected between the first RF port and the second RF port. The first resonator circuit may comprise a first inductor, a first capacitor, and a first stacked switch device. The second resonator circuit may comprise a second inductor, a second capacitor, and a second stacked switch device. The first capacitor and the first stacked switch device may be coupled in series across the first inductor. The second capacitor, the second inductor, and the second stacked switch device may be connected in parallel.
Claims20
An apparatus comprising:
- an RF input port;
- an RF output port;
- an RF common port;
- a series transmit switch connected between said RF input port and said RF common port;
- a first resonator circuit;
- and
- a second resonator circuit, wherein the first resonator circuit and the second resonator circuit are connected in series between the RF common port and the RF output port, the first resonator circuit comprises a first inductor, a first capacitor, and a first stacked switch device, the second resonator circuit comprises a second inductor, a second capacitor, and a second stacked switch device, the first capacitor and the first stacked switch device are coupled in series across the first inductor, and the second capacitor, the second inductor, and the second stacked switch device are connected in parallel.
An apparatus comprising:
- a first RF port;
- a second RF port;
- a first resonator circuit;
- and
- two or more second resonator circuits, wherein the first resonator circuit and the second resonator circuits are connected in series between the first RF port and the second RF port, the first resonator circuit comprises a first inductor, a first capacitor, and a first stacked switch device, each of the second resonator circuits comprises a second inductor, a second capacitor, and a second stacked switch device, the first capacitor and the first stacked switch device are coupled in series across the first inductor, and the second capacitor, the second inductor, and the second stacked switch device of each of the second resonator circuits are connected in parallel.
Dependencies are inferred from the claim text.