PIN diode bias scheme to improve leakage characteristics and P1dB threshold level of reflective limiter device

A wireless front-end module receiver protection limiter comprising:

• an input port;
• an output port;
• a first bias input;
• a first shunt PIN diode;
• a first radio frequency (RF) choke inductor;
• and
• a first direct current (DC) blocking capacitor, wherein (i) said input port is connected to said output port, a first terminal of said first shunt PIN diode, and a first terminal of said first RF choke inductor, (ii) a second terminal of said first RF choke inductor is connected to a first terminal of said first DC blocking capacitor and said first bias input, (iii) a second terminal of said first shunt PIN diode and a second terminal of said first DC blocking capacitor are connected to a circuit ground potential, and (iv) a bias circuit is configured to provide a first bias voltage having a magnitude lower than a knee voltage of said first shunt PIN diode at said first bias input.

A method of improving leakage characteristics and 1 dB compression threshold level of a reflective limiter comprising:

• connecting an input port of the reflective limiter to an output port of the reflective limiter, a first terminal of a first shunt PIN diode, and a first terminal of a first RF choke inductor;
• connecting a second terminal of said first RF choke inductor to a first terminal of a first DC blocking capacitor and a first bias input;
• connecting a second terminal of said first shunt PIN diode and a second terminal of said first DC blocking capacitor to a circuit ground potential;
• and
• applying a first bias voltage having a magnitude lower than a knee voltage of said first shunt PIN diode at said first bias input.