US 10,748,992 B2 · Semiconductor element

Abstract

A semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. A thickness of the semiconductor structure ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method. The carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.

Claims11

Dependent claims

A semiconductor element comprising:

a semiconductor structure comprising a P-type semiconductor and an N-type semiconductor overlapped with each other and defining a first surface and a second surface;
a single carbon nanotube positioned on the first surface of the semiconductor structure and separable from the semiconductor structure, the single carbon nanotube being an electrode of the semiconductor structure;
a conductive film on the second surface of the semiconductor structure, wherein the semiconductor structure is located between the single carbon nanotube and the conductive film, and the single carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.

Dependencies are inferred from the claim text.

Semiconductor element

Life of this patent

Semiconductor element

Life of this patent

Abstract

Claims11