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US 10,747,102 B2Granted
Extreme ultraviolet mask blank with multilayer absorber and method of manufacture
AssigneeApplied Materials, Inc.
InventorVibhu Jindal
Life of this patent
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Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer stack of absorber layers on the capping layer, the multilayer stack of absorber layers including a plurality of absorber layer pairs.
Claims20
A method of manufacturing an extreme ultraviolet (EUV) mask blank comprising:
- forming a multilayer stack of reflective layers on a substrate, the multilayer stack of reflective layers including a plurality of reflective layer pairs;
- forming a capping layer on the multilayer stack of reflective layers;
- and
- forming a multilayer stack of absorber layers on the capping layer, the multilayer stack of absorber layers including a plurality of absorber layer pairs, each pair comprising two different absorber materials having extinction coefficient (k) values that are different and index of refraction values (n) that are different, wherein the absorber layer pairs comprise a first layer including an absorber material selected from the group consisting of tantalum (Ta), tantalum nitride (TaN), tantalum nitride oxide (TaNO), and tantalum borate (TaBO), and a second layer including an absorber material selected from the group consisting of platinum (Pt), zinc (Zn), gold (Au), nickel (Ni), nickel oxide (NiO), silver oxide (Ag2O), iridium (Ir), iron (Fe), tin dioxide (SnO2), cobalt (Co), chromium nickel alloys, Ni8Cr2, tin oxide (SnO), copper (Cu), silver (Ag), actinium (Ac), tellurium (Te), caesium iodide (CsI), tin (Sn), zinc telluride (ZnTe) and antimony (Sb).
1 more element
An extreme ultraviolet (EUV) mask blank comprising:
- a substrate;
- a multilayer stack of reflective layers on the substrate, the multilayer stack of reflective layers including a plurality of reflective layers including reflective layer pairs;
- a capping layer on the multilayer stack of reflecting layers;
- and
- a multilayer stack of absorber layers on the capping layer, the multilayer stack of absorber layers including a plurality of absorber layer pairs, each pair comprising two different absorber materials having extinction coefficient (k) values that are different and index of refraction values (n) that are different wherein the absorber layer pairs comprise a first layer including an absorber material selected from the group consisting of tantalum (Ta), tantalum nitride (TaN), tantalum nitride oxide (TaNO), tantalum borate (TaBO) and a second layer including an absorber material selected from the group consisting of platinum (Pt), zinc (Zn), gold (Au), nickel (Ni) nickel oxide (NiO), silver oxide (Ag2O), iridium (Ir), iron (Fe), tin dioxide (SnO2), cobalt (Co), chromium nickel alloys, Ni8Cr2, tin oxide (SnO), copper (Cu), silver (Ag), actinium (Ac), tellurium (Te), caesium iodide (CsI), tin (Sn), zinc telluride (ZnTe) and antimony (Sb).
2 more elements
Dependencies are inferred from the claim text.