Ion channel pressure sensor and manufacturing method of the same
AssigneeKorea University Research and Business Foundation
InventorsChang-Soo Han, Kyoung-Yong Chun
Life of this patent
Estimating the term…
Loading patent…
AssigneeKorea University Research and Business Foundation
InventorsChang-Soo Han, Kyoung-Yong Chun
Estimating the term…
Provided are an ion channel pressure sensor and a manufacturing method of the same. The ion channel pressure sensor includes: a bottom storage including a bottom storage space in which an electrolyte is stored; a top storage including a top storage space in which an electrolyte is stored; a membrane disposed between the bottom storage and the top storage, the membrane including a plurality of through-holes; a plate-shaped bottom support disposed on a bottom surface of the bottom storage; a plate-shaped top support disposed on a top surface of the top storage; a power supply configured to apply a voltage between the electrolyte stored in the bottom storage space and the electrolyte stored in the top storage space; and an ammeter configured to detect a current flowing to the power supply.
An ion channel pressure sensor comprising:
A manufacturing method of an ion channel pressure sensor, comprising:
Dependencies are inferred from the claim text.