Method for producing an optoelectronic device comprising a plurality of gallium nitride diodes
AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, Thales
InventorsFrançois Templier, Lamine Benaissa, Marc Rabarot
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Abstract
A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.
Claims15
A method of manufacturing an optoelectronic device, comprising the successive steps of:
- a) transferring, onto a surface of a control integrated circuit comprising a plurality of metal connection pads, an active diode stack comprising at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the active diode stack is electrically connected to the metal pads of the control circuit;
- and
- b) forming in the active diode stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.
Dependencies are inferred from the claim text.