Wafer scale image intensifier

A non-transitory computer readable medium encoded with a computer program, including instructions to cause a processor to control a manufacturing device to:

• manufacture a multi-layer image intensifier wafer, including to,
• fabricate first and second glass wafers, each having an array of cavities that extend between respective openings in first and second surfaces of the respective glass wafer;
• dope a semiconductor wafer to generate a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and to direct the plurality of electrons to an array of emission areas of a second surface of the semiconductor wafer;
• bond an emission surface of a photo-cathode wafer to the first surface of the first glass wafer;
• bond the second surface of the first glass wafer to the first surface of the semiconductor wafer;
• bond the second surface of the semiconductor wafer to the first surface of the second glass wafer;
• and
• bond the second surface of the second glass wafer to a surface of an anode wafer;
• and
• slice a section of the multi-layer image intensifier wafer to provide a multi-layer image intensifier.

A wafer scale device comprising:

• a wafer comprising a plurality of photo-cathodes;
• a first glass wafer having a plurality of first cavities;
• a semiconductor wafer configured to have a plurality of electron amplification regions, wherein an electron amplification region generates a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and directs the plurality of electrons to an array of emission areas of a second surface of the semiconductor wafer;
• a second glass wafer having a plurality of second cavities;
• an anode wafer having a plurality of anodes, wherein
• a first surface of the first glass wafer is bonded to an output surface of the photo-cathode wafer and a second surface of the first glass wafer is bonded to an input surface of the semiconductor wafer;
• and
• a first surface of the second glass wafer is bonded to an output surface of the semiconductor wafer and a second surface of the second glass wafer is bonded to an input surface of the anode, such that each cavity of the plurality of second cavities is aligned with a respective cavity of the first plurality of first cavities.