Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:

• contacting the substrate with a first vapor phase reactant comprising a transition metal compound comprising an adduct forming ligand that coordinates to a transition metal of the transition metal compound and a halide bonded to the transition metal;
• and
• contacting the substrate with a second vapor phase reactant;
• wherein the transition metal is selected group consisting of copper (Cu), nickel (Ni), and cobalt (Co).

A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand to a reaction chamber, the method comprising:

• providing a precursor source vessel configured for containing the transition metal halide compound, wherein the transition metal halide compound comprises a halide atom bonded to a transition metal atom;
• fluidly connecting the precursor source vessel to the reaction chamber;
• heating the transition metal halide compound contained in the precursor source vessel to a temperature greater than 50° C.;
• generating a vapor pressure of the transition metal halide compound of least at least 0.001 mbar;
• and
• supplying the transition metal halide compound to the reaction chamber.