Transparent conductive structure and formation thereof

An apparatus comprising:

• an optoelectronic device;
• wherein the optoelectronic device includes a “mesa” structure that incudes p-type semiconductor material and n-type semiconductor material;
• wherein the device includes a p-type semiconductor metal contact and an n-type semiconductor metal contact;
• and a zinc oxide transparent conductive structure, wherein the zinc oxide transparent conductive structure includes a contiguous portion of a substantially uniform thickness covering the “mesa” type structure of the optoelectronic device with the zinc oxide transparent conductive structure including additional features with respect to the substantially uniform thickness having greater, additional zinc oxide thickness;
• wherein the zinc oxide transparent conductive structure includes a pathway along a first dimension that has a lower relative resistance than a pathway along a second dimension, wherein some of the additional features having greater, additional zinc oxide thickness include the lower resistance pathway along the first dimension to guide movement of electrical current within the optoelectronic device to improve overall device electrical efficiency, wherein electrode fingers run substantially along the second dimension of the device, the electrode fingers have tips where current crowding is pronounced, wherein ribs of the zinc oxide transparent conductive structure run along the first dimension roughly perpendicular to the electrode fingers ;
• and wherein some of the additional features having greater, additional zinc oxide thickness form non-planar three dimensional structures to improve efficiency of coupling light into or out of the device via scattering and/or light propagation substantially in accordance with geometric optics, the coupling of the light occurring along the second dimension of the surface of the device, wherein the improvement in overall device electrical efficiency and the improvement in the efficiency of coupling light into or out of the device is relative to a conventional transparent conductive structure comprising a layer of substantially uniform thickness.