Bond materials with enhanced plasma resistant characteristics and associated methods
AssigneeTechnetics Group LLC
InventorsJason Wright, Angus McFadden
Life of this patent
Estimating the term…
Abstract
Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.
Claims20
A bonding sheet for use with semiconductor components, the bonding sheet comprising:
- a first side configured to be attached to a first semiconductor component;
- a second side configured to be attached to a second semiconductor component;
- an etch resistant material disposed in first regions of the bonding sheet;
- a bond material disposed in second regions of the bonding sheet;
- and
- a plurality of thermal conductive elements embedded within the bond material in the second regions,
- wherein individual first regions are distinct from and positioned proximate to individual second regions;
- and
- wherein the bonding sheet has:
- a thickness less than about 200 microns,
- a flatness across a length of the bonding sheet less than about 20 microns, and
- an elongation specification less than about 20%.
A device for attaching one or more semiconductor components to one another, the device comprising:
- a bonding sheet including—
- a first side configured to be attached to a first semiconductor component,
- a second side opposite the first side and configured to be attached to a second semiconductor component,
- a bond material spanning substantially across a thickness of the bonding sheet, wherein the bond material comprises perfluoro-elastomers (FFKM);
- an etch resistant material disposed in openings extending through the bonding sheet from the first side to the second side;
- and
- a plurality of thermal conductivity elements embedded in the bond material, the thermal conductivity elements being configured to decompose into a gas when exposed to plasma processing.
A bonding sheet for use with semiconductor components, the bonding sheet comprising:
- a first side configured to be attached to a first semiconductor component;
- a second side configured to be attached to a second semiconductor component;
- an etch resistant material disposed in first regions of the bonding sheet;
- a bond material disposed in second regions of the bonding sheet;
- and
- a plurality of thermal conductive elements embedded within the bond material in the second regions,
- a thermal conductivity less than about 0.3 W/m·K, and
- a thermal uniformity such that a temperature differential across a surface of the bonding sheet is equal to or less than about 2° C. within a temperature range from about −60° C. to about 180° C.;
- wherein individual first regions are distinct from and positioned proximate to individual second regions.
A bonding sheet for use with semiconductor components, the bonding sheet comprising:
- a first side configured to be attached to a first semiconductor component;
- a second side configured to be attached to a second semiconductor component;
- an etch resistant material disposed in first regions of the bonding sheet, wherein the etch resistant material comprises polyetheretherketone (PEEK) and the etch resistant material comprises a plasma-resistant coating including at least one of yttrium oxide (Y2O3), yttrium fluoride (YF3), and yttrium oxyfluoride (YOF);
- a bond material disposed in second regions of the bonding sheet;
- and
- a plurality of thermal conductive elements embedded within the bond material in the second regions,
- wherein individual first regions are distinct from and positioned proximate to individual second regions.
A device for attaching one or more semiconductor components to one another, the device comprising:
- a bonding sheet including—
- a first side configured to be attached to a first semiconductor component,
- a second side opposite the first side and configured to be attached to a second semiconductor component,
- a bond material spanning substantially across a thickness of the bonding sheet;
- an etch resistant material disposed in openings extending through the bonding sheet from the first side to the second side;
- and
- a plurality of thermal conductivity elements embedded in the bond material, the thermal conductivity elements being configured to decompose into a gas when exposed to plasma processing;
- wherein the thickness is less than about 200 microns,
- a thermal conductivity less than about 0.3 W/m·K,
- a flatness across a length of the bonding sheet is less than about 20 microns, and
- an elongation specification less than about 20%.
Dependencies are inferred from the claim text.