Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsJunji Fujino, Yuji Imoto, Shohei Ogawa, Mikio Ishihara
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Abstract
A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.
Claims13
A semiconductor device comprising:
- a semiconductor element having a front electrode;
- an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and formed of aluminum or aluminum alloy;
- and
- a metal member having a joint surface joined to the front electrode of the semiconductor element with a bonding material, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, formed of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate, wherein
- the metal member has a protrusion protruding from a surface of the electrode plate,
- the protrusion has a bottom surface opposed to the front electrode of the semiconductor element and a side surface disposed between the bottom surface and the electrode plate, and
- the joint surface includes the bottom surface and the side surface, and the bonding material is disposed on the bottom surface and the side surface.
A semiconductor device comprising:
- a semiconductor element having a front electrode;
- an electrode plate having an area lamer than the front electrode of the semiconductor element in a two-dimensional view and formed of aluminum or aluminum alloy;
- and
- a metal member having a joint surface joined to the front electrode of the semiconductor element with a bonding material, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, formed of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate, wherein
- the metal member is formed only with a first metal layer having the joint surface, and
- the first metal layer of the metal member has a thickness equal to or greater than 10 μm.
A semiconductor device comprising:
- a semiconductor element having a front electrode;
- an electrode plate having an area lamer than the front electrode of the semiconductor element in a two-dimensional view and formed of aluminum or aluminum alloy;
- and
- a metal member having a joint surface joined to the front electrode of the semiconductor element with a bonding material, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, formed of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate,
- wherein the electrode plate has an opening, and the metal member is disposed in the opening.
Dependencies are inferred from the claim text.