Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
AssigneeAtomera Incorporated
InventorsKeith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson
Life of this patent
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Abstract
A method for making a semiconductor device may include forming a recess in a substrate including a first Group IV semiconductor, forming an active layer comprising a Group III-V semiconductor within the recess, and forming a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The method may further include forming an impurity and point defect blocking superlattice layer adjacent the buffer layer.
Claims25
A method for making a semiconductor device comprising:
- forming a recess in a substrate comprising a first Group IV semiconductor;
- forming an active layer comprising a Group III-V semiconductor within the recess;
- forming a buffer layer between the substrate and the active layer and comprising a second Group IV semiconductor;
- and
- forming a first impurity and point defect blocking superlattice layer between and in contact with the substrate and the buffer layer;
- and
- forming a second impurity and point defect blocking superlattice layer between and in contact with the buffer layer and the active layer.
A method for making a semiconductor device comprising:
- forming a substrate comprising a first Group IV semiconductor having a recess therein;
- forming an active layer comprising a Group III-V semiconductor within the recess;
- forming a buffer layer between the substrate and the active layer and comprising a second Group IV semiconductor;
- forming a first impurity and point defect blocking superlattice layer between and in contact with the substrate and the buffer layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base monolayers of the first Group IV semiconductor defining a first base semiconductor portion, and at least one first non-semiconductor monolayer constrained within a crystal lattice of adjacent first base semiconductor portions;
- and
- forming a second impurity and point defect blocking superlattice layer between and in contact with the buffer layer and the active layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base monolayers of the second Group IV semiconductor defining a second base semiconductor portion, and at least one second non-semiconductor monolayer constrained within a crystal lattice of adjacent second base semiconductor portions.
A method for making a semiconductor device comprising:
- forming a substrate comprising a first Group IV semiconductor having a recess therein;
- forming an active layer comprising a Group III-V semiconductor within the recess;
- forming a buffer layer between the substrate and the active layer and comprising a second Group IV semiconductor;
- forming a first impurity and point defect blocking superlattice layer between and in contact with the substrate and the buffer layer;
- and
- forming a second impurity and point defect blocking superlattice layer between and in contact with the buffer layer and the active layer;
- the first and second impurity and point defect blocking superlattice layers each comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Dependencies are inferred from the claim text.