System and method of analyzing a crystal defect

A method of analyzing a crystal defect, comprising:

• capturing an image of a specimen having a crystal structure to generate a measured transmission electronic microscope (TEM) image;
• processing the measured TEM image to generate structural defect information of the specimen;
• generating a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure, where each virtual TEM image is formed from a plurality pixels representing atoms of the crystal structure disposed on an incident plane having a first atomic arrangement pattern where at least one of the pixels is deviated from a periodicity of the first atomic arrangement pattern to generate the corresponding three-dimensional structural defect;
• and
• determining a defect type of the measured TEM image by comparing the measured TEM image with the plurality of virtual TEM images using the structural defect information.

A method of analyzing a crystal defect, comprising:

• capturing an image of a specimen having a crystal structure to generate a measured transmission electron microscope (TEM) image;
• generated an enforced image by increasing a contrast of the measured TEM image;
• tracing a first atomic arrangement pattern in a lattice direction using the enforced image to detect a defect line including defect pixels that are deviated from a periodicity of the first arrangement pattern;
• determining a location of an end point of the defect line as a location of a dislocation core;
• generating a cropped image having a predetermined size and centered on the location of the dislocation core, wherein the cropped image corresponds to a portion of the measured TEM image or a portion of the enforced image;
• generating a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure, where each virtual TEM image is formed from a plurality pixels representing atoms of the crystal structure disposed on an incident plane having a second atomic arrangement pattern where at least one of the plurality of pixels is deviated from a periodicity of the second atomic arrangement pattern to generate the corresponding three-dimensional structural defect;
• and
• determining a defect type of the measured TEM image by comparing the cropped image with the plurality of virtual TEM images.