High-frequency electronic device and manufacturing method thereof
AssigneeInnolux Corporation
InventorsYan-Syun Wang, Chi-Che Tsai, Wei-Yen Wu, I-Yin Li
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Abstract
A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.
Claims18
A high-frequency electronic device, comprising:
- a dielectric substrate having a first side, a second side opposite to the first side, a first region, and a second region adjacent to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution;
- a first patterned metal layer disposed on the first side of the dielectric substrate and corresponding to the first region;
- and
- a second patterned metal layer disposed on the first side or the second side of the dielectric substrate, wherein a lateral side of the first patterned metal layer is separated from a lateral side of the first region by a second distance, and the second distance is in a range from 2 to 6 times a width W of the first patterned metal layer.
A high-frequency electronic device, comprising:
- a dielectric substrate having a first side, a second side opposite to the first side, a first region, and a second region adjacent to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution;
- a first patterned metal layer disposed on the first side of the dielectric substrate and corresponding to the first region;
- and
- a second patterned metal layer, wherein the first patterned metal layer is interposed between the second patterned metal layer and the dielectric substrate, the first patterned metal layer is separated from the second patterned metal layer by a first distance, a lateral side of the first patterned metal layer is separated from a lateral side of the first region by a second distance, and the second distance is in a range from 2 to 6 times the first distance.
Dependencies are inferred from the claim text.