Imaging sensor, imaging system, and moving body
AssigneeCanon Kabushiki Kaisha
InventorYoichi Wada
Life of this patent
Estimating the term…
Abstract
A third line that supplies a first potential to a first semiconductor region of a first detection pixel and a fourth line that supplies a second potential to the first semiconductor region of a second detection pixel are provided. An interval between a partial line of the third line and a partial line of the fourth line is longer than an interval between a partial line of a first line and a partial line of a second line which extend along the partial line of the third line and the partial line of the fourth line.
Claims33
An imaging sensor provided with a pixel array including a plurality of pixels arranged in a plurality of rows and a plurality of columns,
- the plurality of pixels including a first detection pixel, a second detection pixel, and an effective pixel, and
- each of the first detection pixel and the second detection pixel including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a transfer gate configured to control a connection state between the first semiconductor region and the second semiconductor region, and an amplification transistor connected to the second semiconductor region,
- the imaging sensor comprising:
- a first line and a second line connected to the effective pixel;
- a third line that supplies a first potential to the first semiconductor region of the first detection pixel;
- and
- a fourth line that supplies a second potential to the first semiconductor region of the second detection pixel,
- wherein each of the first line and the second line includes a partial line extending along a first direction in the pixel array, and the partial line of the first line and the partial line of the second line are adjacent to each other,
- wherein each of the third line and the fourth line includes a partial line extending along the first direction in the pixel array, and
- wherein an interval between the partial line of the third line and the partial line of the fourth line is longer than an interval between the partial line of the first line and the partial line of the second line in a plan view.
An imaging sensor provided with a pixel array including a plurality of pixels arranged in a plurality of rows and a plurality of columns,
- the plurality of pixels including a first detection pixel and an effective pixel, and
- each of the first detection pixel and the effective pixel including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, and a plurality of transistors, the plurality of transistors including a transfer transistor configured to control a connection state between the first semiconductor region and the second semiconductor region, and an amplification transistor configured to output a signal based on a potential of the second semiconductor region,
- the imaging sensor comprising:
- a contact connected to the first semiconductor region of the first detection pixel;
- and
- a first line that supplies a first potential to the first semiconductor region of the first detection pixel via the contact,
- wherein a gate of one of the plurality of transistors of the first detection pixel and a gate of one of the plurality of transistors of the effective pixel are connected to a pixel control line commonly,
- wherein a part of the first line overlaps with the first semiconductor region of the first detection pixel, in a plan view.
Dependencies are inferred from the claim text.