Capacitance balance in dual sided contact switch

A method of making a dual sided contact switch comprising:

• forming a first independent drain/source region of a multi-gate active device;
• forming a first shared drain/source region of the multi-gate active device;
• forming a second independent drain/source region of the multi-gate active device, adjacent to the first shared drain/source region;
• forming a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region;
• forming a gate region between the first independent drain/source region and the first shared drain/source region, and between the second independent drain/source region and the second shared drain/source region;
• fabricating a first front-side contact coupled to the first independent drain/source region;
• fabricating a first backside contact coupled to the first shared drain/source region;
• fabricating a second front-side contact coupled the second independent drain/source region;
• and
• fabricating a second backside contact coupled to the second shared drain/source region.

A dual sided contact switch comprising:

• a first independent drain/source region of a multi-gate active device;
• means for forming a portion of a first transistor and a second transistor;
• the multi-gate active device including the first transistor and the second transistor;
• a second independent drain/source region of the multi-gate active device, adjacent to the transistor forming means;
• a shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region;
• a gate region between the first independent drain/source region and the transistor forming means, and also between the second independent drain/source region and the shared drain/source region;
• a first front-side contact coupled to the first independent drain/source region;
• a first backside contact coupled to the transistor forming means;
• a second front-side contact coupled the second independent drain/source region;
• and
• a second backside contact coupled to the shared drain/source region.

A radio frequency front end module comprising:

• a dual sided contact switch having a first independent drain/source region of a multi-gate active device, a first shared drain/source region of the multi-gate active device, a second independent drain/source region of the multi-gate active device, adjacent to the first shared drain/source region, a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region,
• a gate region between the first independent drain/source region and the first shared drain/source region, and also between the second independent drain/source region and the second shared drain/source region;
• a first front-side contact coupled to the first independent drain/source region;
• a first backside contact coupled to the first shared drain/source region;
• a second front-side contact coupled the second independent drain/source region;
• and
• a second backside contact coupled to the second shared drain/source region;
• and
• an antenna coupled to the dual sided contact switch.