RF amplifier with impedance matching components monolithically integrated in transistor die

A packaged amplifier circuit, comprising:

• an RF package comprising an electrically conductive die pad, an electrically conductive first RF lead extending away from the die pad, and an electrically conductive second RF lead extending away from the die pad in an opposite direction as the first RF lead;
• an RF transistor die mounted on the die pad such that a first outer edge side of the RF transistor die faces the first RF lead and a second outer edge side of the RF transistor die faces the second RF lead,
• the RF transistor die comprising an RF input terminal, an RF output terminal, and a reference potential terminal;
• a first capacitor integrally formed in the RF transistor die, the first capacitor comprising first and second terminals;
• and
• an output impedance matching network that electrically couples the RF output terminal to the second RF lead,
• wherein the first capacitor forms at least part of the output impedance matching network.

An RF transistor die, comprising:

• an upper side, a rear side opposite the upper side, and first and second outer edge sides that extend between the upper and rear sides and are arranged opposite one another;
• an electrically conductive RF input pad disposed on the upper side;
• an electrically conductive RF output pad disposed on the upper side;
• a reference potential pad disposed on the lower side;
• a passive electrical connector integrally formed in the RF transistor die and comprising first and second end connection points,
• wherein the RF input pad and the RF output pad are separated from one another in a width direction of the RF transistor die, the width direction being perpendicular to the first and second outer edge sides,
• wherein the first and second end connection points are separated from one another in the width direction of the RF transistor die, and
• wherein the passive electrical connector is electrically isolated from the RF input pad.