Semiconductor laser element
AssigneeSharp Kabushiki Kaisha
InventorsYasuo Kan, Ryuhichi Sogabe
Life of this patent
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Abstract
A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer includes a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion. A top surface of a region including the grooved portion is covered by a metal. The terrace section is divided into a plurality of portions that are disposed in a scattered manner.
Claims7
A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer, the semiconductor laser element comprising:
- a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion,
- wherein a top surface of a region including the grooved portion is covered by a metal, and the terrace section is divided into a plurality of portions that are disposed in a scattered manner.
A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer, the semiconductor laser element comprising:
- a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion,
- wherein a top surface of a region including the grooved portion is covered by a metal, and a terrace width, which is a width of the terrace section, is not constant in a resonator direction, and the terrace width at at least a part of the terrace section is narrower than a width of the grooved portion between the terrace section and the ridge portion.
A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer, the semiconductor laser element comprising:
- a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion,
- wherein a top surface of a region including the grooved portion is covered by a metal, a terrace width, which is a width of the terrace section, is not constant in a resonator direction, and the terrace width over an entire region in the resonator direction is narrower than a width of the grooved portion between the terrace section and the ridge portion.
Dependencies are inferred from the claim text.