Organic semiconductor transistor

Abstract

An organic semiconductor transistor is provided. The organic semiconductor transistor includes a gate electrode, a gate insulating layer positioned on the gate electrode, a source electrode and a drain electrode which are positioned on the gate insulating layer and spaced apart from each other, a channel layer formed of an organic semiconductor on the gate insulating layer on which the source electrode and the drain electrode are formed, and a dopant layer formed by injecting dopant molecules downward from an upper portion of the channel layer, wherein the dopant layer is formed to be spaced above a position at which each of the source electrode and the drain electrode is in contact with the channel layer, and the dopant molecules and the organic semiconductor form a material combination in which the dopant molecules diffuse in the organic semiconductor in a solid-state diffusion manner.

Dependencies are inferred from the claim text.