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US 10,707,416 B2Granted
Resistance variable memory device with nanoparticle electrode and method of fabrication
AssigneeOvonyx Memory Technology, LLC
InventorsJun Liu, Kristy A. Campbell
Life of this patent
Estimating the term…
Abstract
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
Claims19
An apparatus, comprising:
- a processor;
- a memory circuit configured to communicate with the processor, the memory circuit comprising:
- a first electrode;
- an aluminum layer in contact with the first electrode, the aluminum layer comprising at least one nanochannel that extends through the aluminum layer to the first electrode;
- at least one nanoparticle in contact with the aluminum layer, within the at least one nanochannel, or both;
- a second nanoparticle in contact with the first electrode, wherein the second nanoparticle is spherical or semi-spherical shaped;
- a first germanium selenide layer in contact with the aluminum layer and the at least one nanoparticle;
- and
- a second electrode in contact with the first germanium selenide layer.
6 more elements
An apparatus, comprising:
- a processor;
- a memory circuit configured to communicate with the processor, the memory circuit comprising:
- a first electrode;
- a first nanoparticle in contact with the first electrode;
- a second nanoparticle in contact with the first electrode, wherein the second nanoparticle is spherical or semi-spherical shaped;
- a first germanium selenide layer in contact with the first electrode and the first nanoparticle;
- a second germanium selenide layer in contact with the first germanium selenide layer;
- a metal chalcogenide layer in contact with the second germanium selenide layer;
- a third germanium selenide layer in contact with the metal chalcogenide layer;
- and
- a second electrode in contact with the third germanium selenide layer.
8 more elements
An apparatus, comprising:
- a processor;
- a memory circuit configured to communicate with the processor, the memory circuit comprising:
- a first electrode and a second electrode;
- a chalcogenide material memory element comprising a chalcogenide glass material in contact with the first electrode and the second electrode;
- a nanoparticle in contact with the first electrode and the chalcogenide material memory element, wherein the nanoparticle is configured to generate a localized electric field in response to an applied voltage;
- and
- a second nanoparticle in contact with the first electrode, wherein the second nanoparticle is spherical or semi-spherical shaped.
4 more elements
Dependencies are inferred from the claim text.