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US 10,707,415 B2Granted
Methods and processes for forming devices from correlated electron material (CEM)
AssigneeArm Limited
InventorsLucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric, Manuj Rathor, Glen Arnold Rosendale
Life of this patent
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Abstract
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
Claims17
A method of forming a plurality of correlated electron material (CEM) devices on a wafer, comprising:
- forming, at a first stage of a plurality of stages of a manufacturing operation, at least a first CEM device of the plurality of CEM devices to operate at a first layer of the wafer according to a first set of particular physical dimensional parameters or compositional parameters, or a combination thereof, to implement a first performance profile for the first CEM device, wherein the plurality of stages of the manufacturing operation include a front-end-of-line stage, a middle-of-line stage, back-end-of-line stage and/or a system integration stage, or any combination thereof;
- and
- forming, at a second stage of the plurality of stages of the manufacturing operation, at least a second CEM device of the plurality of CEM devices to operate at a second layer positioned over the first layer of the wafer, wherein the second CEM device to exhibit a performance profile different from the first performance profile for the first CEM device.
Dependencies are inferred from the claim text.