MRAM structure for efficient manufacturability
AssigneeMarvell International Ltd.
InventorsZining Wu, Winston Lee, Runzi Chang
Life of this patent
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Abstract
A semiconductor device comprises a first conductive material, a contact, an a magnetic tunneling junction positioned between the first conductive material and the contact. The semiconductor device further comprises a spacer that is positioned between the first conductive material and the contact and surrounds at least a portion of the magnetic tunneling junction. The spacer comprises spacer material that has at least some etch selectivity compared to a dielectric material that surrounds at least a portion of the first conductive material.
Claims9
A method of manufacturing a semiconductor device, the method comprising:
- forming a spacer surrounding at least a portion of a magnetic tunneling junction by depositing a spacer material to at least a region of a contact that is adjacent to the magnetic tunneling junction;
- after forming the spacer, depositing an etch stop material onto the spacer and the magnetic tunneling junction to directly contact an upper surface of a storage layer of the magnetic tunneling junction;
- depositing a dielectric material directly onto the etch stop material, wherein the spacer material has at least some etch selectivity compared to the dielectric material;
- removing a portion of the dielectric material that is proximate to the magnetic tunneling junction and the spacer to form a trench;
- and
- depositing a first conductive material into the trench.
Dependencies are inferred from the claim text.