Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

An integrated circuit comprising:

• a first layer including one or more magnetic materials;
• a second layer including one or more conductive materials, the second layer having a second layer width;
• a third layer between the first and second layers, the third layer including one or more magnetic materials;
• a fourth layer between the first and third layers, the fourth layer including one or more insulator materials;
• a fifth layer between the third and second layers, the fifth layer including one or more insulator materials;
• a spacer around the second layer, the spacer including one or more dielectric materials;
• a sixth layer in contact with sidewalls of at least the spacer and the first layer, the sixth layer conformal to at least part of the (1) underlying first layer, (2) second layer, and (3) spacer, the sixth layer being at least in contact with top surfaces of the spacer and the second layer;
• a first interconnect in contact with the second layer, the first interconnect having a first interconnect width less than the second layer width;
• a second interconnect in contact with the first layer, the second interconnect coaxial with the first interconnect;
• wherein sidewalls of the spacer and respective sidewalls of the fifth layer are aligned with one another;
• and
• wherein a top surface of the second layer is coplanar with a top surface of the spacer.

An integrated circuit including a spin-torque transfer memory (STTM) device, the integrated circuit comprising:

• a fixed magnetic layer;
• a conductive structure having a first width;
• a free magnetic layer between the fixed magnetic layer and the conductive structure;
• a first insulator layer between fixed magnetic layer and the free magnetic layer;
• a second insulator layer between the free magnetic layer and the conductive structure;
• a dielectric spacer around the conductive structure, wherein sidewalls of the dielectric spacer and respective sidewalls of the free magnetic layer are aligned with one another;
• an interconnect in contact with the conductive structure, the interconnect having second width less than the first width;
• and
• a conformal layer in contact with sidewalls of the fixed magnetic layer, the free magnetic layer, the first insulator layer, the second insulator layer, and the dielectric spacer, the conformal layer conformal to the underlying conductive structure, free magnetic layer, first insulation layer, second insulation layer, and dielectric spacer, the conformal layer in contact with top surfaces of the dielectric spacer and the conductive structure.