Hall effect sensor with enhanced sensitivity and method for producing the same

A device comprising:

• an isolation structure formed in a frame-shaped pattern in top view, the isolation structure extending through a cross-shaped silicon (Si) layer to an oxide layer of a silicon-on-insulator (SOI) substrate in cross section;
• the cross-shaped Si layer formed over the oxide layer, and the cross-shaped Si layer within and adjacent to the frame-shaped isolation structure;
• and
• ion-doped implantation regions at opposite ends of the cross-shaped Si layer in top view, and formed in direct contact with the frame-shaped pattern of the STI structure in top view,
• wherein each ion-doped implantation region comprises a contact lead.

A device comprising:

• a silicon-on-insulator (SOI) substrate having a sequentially formed silicon (Si) substrate and an ultra-thin buried oxide (UTBOX) and a cross-shaped Si layer;
• a shallow trench isolation (STI) structure formed in a frame-shaped pattern in top view and extending through the cross-shaped Si layer to the UTBOX layer in cross section;
• the cross-shaped Si layer formed over the UTBOX layer, and the cross-shaped Si layer within and adjacent to STI structure;
• and
• N+ dopant ions implanted into opposite ends of the cross-shaped Si layer in top view to form N+ implantation regions in direct contact with the frame-shaped pattern of the STI structure in top view,
• wherein each N+ implantation region comprises a contact lead.