Shadow mask sidewall tunnel junction for quantum computing
AssigneeInternational Business Machines Corporation
InventorsMarkus Brink, Sami Rosenblatt
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Abstract
A technique relates to forming a sidewall tunnel junction. A first conducting layer is formed using a first shadow mask evaporation. A second conducting layer is formed on a portion of the first conducting layer, where the second conducting layer is formed using a second shadow mask evaporation. An oxide layer is formed on the first conducting layer and the second conducting layer. A third conducting layer is formed on part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the third conducting layer.
Claims10
A method of forming a sidewall tunnel junction comprising:
- forming a non-metal layer having a height dimension greater than a width dimension, the height dimension being perpendicular to a substrate on which the non-metal layer is formed;
- forming a first conducting layer on a portion of the non-metal layer, the first conducting layer being formed using a first shadow mask evaporation;
- forming an oxide layer on the first conducting layer;
- and
- forming a second conducting layer on a part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the second conducting layer, the sidewall tunnel junction being Josephson junction.
Dependencies are inferred from the claim text.