Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip

A light-emitting system comprising a plurality of flip-chip LED chips each including:

• a substrate;
• a first semiconductor layer over the substrate;
• a light-emitting layer over the first semiconductor layer;
• a second semiconductor layer over the light emitting layer;
• a local defect region over a portion of the second semiconductor layer, the local defect region extending downward to the first semiconductor layer;
• a first metal layer over a portion of the first semiconductor layer;
• a second metal layer over a portion of the second semiconductor layer;
• an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, wherein the insulating layer has opening structures over the first metal layer and the second metal layer, respectively;
• and
• a eutectic electrode structure over the insulating layer with openings, wherein the eutectic electrode structure comprises a first eutectic layer and a second eutectic layer from bottom up at a vertical direction, and includes a first-type electrode region and a second-type electrode region a at horizontal direction;
• wherein the second eutectic layer does not overlap with the first metal layer or the second metal layer at the vertical direction.